InGaAs/AlInAs quantum cascade laser sources based on intra-cavity second harmonic generation emitting in 2.6-3.6 micron range
Identifieur interne : 002C25 ( Main/Repository ); précédent : 002C24; suivant : 002C26InGaAs/AlInAs quantum cascade laser sources based on intra-cavity second harmonic generation emitting in 2.6-3.6 micron range
Auteurs : RBID : Pascal:11-0263472Descripteurs français
- Pascal (Inist)
- Conversion fréquence optique, Génération harmonique 2, Quasi accord phase, Déformation mécanique, Courant seuil, Laser cascade quantique, Laser semiconducteur, Optique non linéaire, Densité courant, Température ambiante, Susceptibilité optique non linéaire, Hétérostructure, Composé ternaire, Gallium Arséniure, Indium Arséniure, Composé binaire, Semiconducteur III-V, Indium Phosphure, Harmonique 2, As Ga In, InP, In P, InGaAs, AlInAs, InGaAs/InP, 0130C, 4255P, 4265K, 4265A.
English descriptors
- KwdEn :
- Ambient temperature, Binary compounds, Current density, Gallium Arsenides, Heterostructures, III-V semiconductors, Indium Arsenides, Indium Phosphides, Nonlinear optical susceptibility, Nonlinear optics, Optical frequency conversion, Quantum cascade laser, Quasi-phase matching, Second harmonic, Second harmonic generation, Semiconductor lasers, Strains, Ternary compounds, Threshold current.
Abstract
We discuss the design and performance of quantum cascade laser sources based on intra-cavity second harmonic generation operating in at wavelengths shorter than 3.7μm. A passive heterostructure tailored for giant optical nonlinearity is integrated on top of an active region and patterned for quasi-phasematching. We demonstrate operation of λ≃3.6μm, λ≃3.0μm, and λ≃2.6μm devices based on lattice-matched and strain-compensated InGaAs/AlInAs/InP materials. Threshold current densities of typical devices with nonlinear sections are only 10-20% higher than that of the reference lasers without the nonlinear section. Our best devices have threshold current density of 2.2kA/cm2 and provide approximately 35μW of second-harmonic output at 2.95μm at room temperature. The second-harmonic conversion efficiency is approximately 100μW/W2. Up to two orders of magnitude higher conversion efficiencies are expected in fully-optimized devices. Keywords: quantum cascade lasers, second harmonic generation, short wavelength, room temperature, intersubband, giant nonlinear susceptibility, quasi-phase matching.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">InGaAs/AlInAs quantum cascade laser sources based on intra-cavity second harmonic generation emitting in 2.6-3.6 micron range</title><author><name sortKey="Belkin, M A" uniqKey="Belkin M">M. A. Belkin</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, The University of Texas at Austin</s1><s2>Austin, TX 78758</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><settlement type="city">Austin (Texas)</settlement><region type="state">Texas</region></placeName><orgName type="university">Université du Texas à Austin</orgName></affiliation></author><author><name sortKey="Jang, M" uniqKey="Jang M">M. Jang</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, The University of Texas at Austin</s1><s2>Austin, TX 78758</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><settlement type="city">Austin (Texas)</settlement><region type="state">Texas</region></placeName><orgName type="university">Université du Texas à Austin</orgName></affiliation></author><author><name sortKey="Adams, R W" uniqKey="Adams R">R. W. Adams</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, The University of Texas at Austin</s1><s2>Austin, TX 78758</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><settlement type="city">Austin (Texas)</settlement><region type="state">Texas</region></placeName><orgName type="university">Université du Texas à Austin</orgName></affiliation></author><author><name sortKey="Chen, J X" uniqKey="Chen J">J. X. Chen</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Deptartment of Electrical Engineering and MIRTHE, Princeton University</s1><s2>Princeton, NJ 08544</s2><s3>USA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><settlement type="city">Princeton (New Jersey)</settlement><region type="state">New Jersey</region></placeName><orgName type="university">Université de Princeton</orgName></affiliation></author><author><name sortKey="Charles, W O" uniqKey="Charles W">W. O. Charles</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Deptartment of Electrical Engineering and MIRTHE, Princeton University</s1><s2>Princeton, NJ 08544</s2><s3>USA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><settlement type="city">Princeton (New Jersey)</settlement><region type="state">New Jersey</region></placeName><orgName type="university">Université de Princeton</orgName></affiliation></author><author><name sortKey="Gmachl, C" uniqKey="Gmachl C">C. Gmachl</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Deptartment of Electrical Engineering and MIRTHE, Princeton University</s1><s2>Princeton, NJ 08544</s2><s3>USA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><settlement type="city">Princeton (New Jersey)</settlement><region type="state">New Jersey</region></placeName><orgName type="university">Université de Princeton</orgName></affiliation></author><author><name sortKey="Cheng, L W" uniqKey="Cheng L">L. W. Cheng</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Computer Science and Electrical Engineering, University of Maryland Baltimore County</s1><s2>Baltimore, MD 21250</s2><s3>USA</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Baltimore, MD 21250</wicri:noRegion></affiliation></author><author><name sortKey="Choa, F S" uniqKey="Choa F">F.-S. Choa</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Computer Science and Electrical Engineering, University of Maryland Baltimore County</s1><s2>Baltimore, MD 21250</s2><s3>USA</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Baltimore, MD 21250</wicri:noRegion></affiliation></author><author><name sortKey="Wang, X" uniqKey="Wang X">X. Wang</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Adtech Optics, Inc., 18007 Cortney Court</s1><s2>City of Industry, CA91748</s2><s3>USA</s3><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>City of Industry, CA91748</wicri:noRegion></affiliation></author><author><name sortKey="Troccoli, M" uniqKey="Troccoli M">M. Troccoli</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Adtech Optics, Inc., 18007 Cortney Court</s1><s2>City of Industry, CA91748</s2><s3>USA</s3><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>City of Industry, CA91748</wicri:noRegion></affiliation></author><author><name sortKey="Vizbaras, A" uniqKey="Vizbaras A">A. Vizbaras</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Walter Schottky Institut, Technische Universitat München</s1><s2>Garching 85748</s2><s3>DEU</s3><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>85748</wicri:noRegion><wicri:noRegion>Technische Universitat München</wicri:noRegion><wicri:noRegion>Garching 85748</wicri:noRegion></affiliation></author><author><name sortKey="Anders, M" uniqKey="Anders M">M. Anders</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Walter Schottky Institut, Technische Universitat München</s1><s2>Garching 85748</s2><s3>DEU</s3><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>85748</wicri:noRegion><wicri:noRegion>Technische Universitat München</wicri:noRegion><wicri:noRegion>Garching 85748</wicri:noRegion></affiliation></author><author><name sortKey="Grasse, C" uniqKey="Grasse C">C. Grasse</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Walter Schottky Institut, Technische Universitat München</s1><s2>Garching 85748</s2><s3>DEU</s3><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>85748</wicri:noRegion><wicri:noRegion>Technische Universitat München</wicri:noRegion><wicri:noRegion>Garching 85748</wicri:noRegion></affiliation></author><author><name sortKey="Amann, M C" uniqKey="Amann M">M.-C. Amann</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Walter Schottky Institut, Technische Universitat München</s1><s2>Garching 85748</s2><s3>DEU</s3><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>85748</wicri:noRegion><wicri:noRegion>Technische Universitat München</wicri:noRegion><wicri:noRegion>Garching 85748</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0263472</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0263472 INIST</idno><idno type="RBID">Pascal:11-0263472</idno><idno type="wicri:Area/Main/Corpus">003036</idno><idno type="wicri:Area/Main/Repository">002C25</idno></publicationStmt><seriesStmt><idno type="ISSN">0277-786X</idno><title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title><title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ambient temperature</term><term>Binary compounds</term><term>Current density</term><term>Gallium Arsenides</term><term>Heterostructures</term><term>III-V semiconductors</term><term>Indium Arsenides</term><term>Indium Phosphides</term><term>Nonlinear optical susceptibility</term><term>Nonlinear optics</term><term>Optical frequency conversion</term><term>Quantum cascade laser</term><term>Quasi-phase matching</term><term>Second harmonic</term><term>Second harmonic generation</term><term>Semiconductor lasers</term><term>Strains</term><term>Ternary compounds</term><term>Threshold current</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Conversion fréquence optique</term><term>Génération harmonique 2</term><term>Quasi accord phase</term><term>Déformation mécanique</term><term>Courant seuil</term><term>Laser cascade quantique</term><term>Laser semiconducteur</term><term>Optique non linéaire</term><term>Densité courant</term><term>Température ambiante</term><term>Susceptibilité optique non linéaire</term><term>Hétérostructure</term><term>Composé ternaire</term><term>Gallium Arséniure</term><term>Indium Arséniure</term><term>Composé binaire</term><term>Semiconducteur III-V</term><term>Indium Phosphure</term><term>Harmonique 2</term><term>As Ga In</term><term>InP</term><term>In P</term><term>InGaAs</term><term>AlInAs</term><term>InGaAs/InP</term><term>0130C</term><term>4255P</term><term>4265K</term><term>4265A</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We discuss the design and performance of quantum cascade laser sources based on intra-cavity second harmonic generation operating in at wavelengths shorter than 3.7μm. A passive heterostructure tailored for giant optical nonlinearity is integrated on top of an active region and patterned for quasi-phasematching. We demonstrate operation of λ≃3.6μm, λ≃3.0μm, and λ≃2.6μm devices based on lattice-matched and strain-compensated InGaAs/AlInAs/InP materials. Threshold current densities of typical devices with nonlinear sections are only 10-20% higher than that of the reference lasers without the nonlinear section. Our best devices have threshold current density of 2.2kA/cm<sup>2</sup> and provide approximately 35μW of second-harmonic output at 2.95μm at room temperature. The second-harmonic conversion efficiency is approximately 100μW/W<sup>2</sup>. Up to two orders of magnitude higher conversion efficiencies are expected in fully-optimized devices. Keywords: quantum cascade lasers, second harmonic generation, short wavelength, room temperature, intersubband, giant nonlinear susceptibility, quasi-phase matching.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0></fA01><fA02 i1="01"><s0>PSISDG</s0></fA02><fA03 i2="1"><s0>Proc. SPIE Int. Soc. Opt. Eng.</s0></fA03><fA05><s2>7953</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>InGaAs/AlInAs quantum cascade laser sources based on intra-cavity second harmonic generation emitting in 2.6-3.6 micron range</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Novel in-plane semiconductor lasers X : 25-28 January 2011, San Francisco CA</s1></fA09><fA11 i1="01" i2="1"><s1>BELKIN (M. A.)</s1></fA11><fA11 i1="02" i2="1"><s1>JANG (M.)</s1></fA11><fA11 i1="03" i2="1"><s1>ADAMS (R. W.)</s1></fA11><fA11 i1="04" i2="1"><s1>CHEN (J. X.)</s1></fA11><fA11 i1="05" i2="1"><s1>CHARLES (W. O.)</s1></fA11><fA11 i1="06" i2="1"><s1>GMACHL (C.)</s1></fA11><fA11 i1="07" i2="1"><s1>CHENG (L. W.)</s1></fA11><fA11 i1="08" i2="1"><s1>CHOA (F.-S.)</s1></fA11><fA11 i1="09" i2="1"><s1>WANG (X.)</s1></fA11><fA11 i1="10" i2="1"><s1>TROCCOLI (M.)</s1></fA11><fA11 i1="11" i2="1"><s1>VIZBARAS (A.)</s1></fA11><fA11 i1="12" i2="1"><s1>ANDERS (M.)</s1></fA11><fA11 i1="13" i2="1"><s1>GRASSE (C.)</s1></fA11><fA11 i1="14" i2="1"><s1>AMANN (M.-C.)</s1></fA11><fA12 i1="01" i2="1"><s1>BELYANIN (Alexey A.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>SMOWTON (Peter M.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Department of Electrical and Computer Engineering, The University of Texas at Austin</s1><s2>Austin, TX 78758</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Deptartment of Electrical Engineering and MIRTHE, Princeton University</s1><s2>Princeton, NJ 08544</s2><s3>USA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Computer Science and Electrical Engineering, University of Maryland Baltimore County</s1><s2>Baltimore, MD 21250</s2><s3>USA</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="04"><s1>Adtech Optics, Inc., 18007 Cortney Court</s1><s2>City of Industry, CA91748</s2><s3>USA</s3><sZ>9 aut.</sZ><sZ>10 aut.</sZ></fA14><fA14 i1="05"><s1>Walter Schottky Institut, Technische Universitat München</s1><s2>Garching 85748</s2><s3>DEU</s3><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ><sZ>14 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>SPIE</s1><s3>USA</s3><s9>org-cong.</s9></fA18><fA20><s2>795315.1-795315.7</s2></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA25 i1="01"><s1>SPIE</s1><s2>Bellingham WA</s2></fA25><fA26 i1="01"><s0>978-0-8194-8490-1</s0></fA26><fA43 i1="01"><s1>INIST</s1><s2>21760</s2><s5>354000174736470270</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>23 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0263472</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Proceedings of SPIE, the International Society for Optical Engineering</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We discuss the design and performance of quantum cascade laser sources based on intra-cavity second harmonic generation operating in at wavelengths shorter than 3.7μm. A passive heterostructure tailored for giant optical nonlinearity is integrated on top of an active region and patterned for quasi-phasematching. We demonstrate operation of λ≃3.6μm, λ≃3.0μm, and λ≃2.6μm devices based on lattice-matched and strain-compensated InGaAs/AlInAs/InP materials. Threshold current densities of typical devices with nonlinear sections are only 10-20% higher than that of the reference lasers without the nonlinear section. Our best devices have threshold current density of 2.2kA/cm<sup>2</sup> and provide approximately 35μW of second-harmonic output at 2.95μm at room temperature. The second-harmonic conversion efficiency is approximately 100μW/W<sup>2</sup>. Up to two orders of magnitude higher conversion efficiencies are expected in fully-optimized devices. Keywords: quantum cascade lasers, second harmonic generation, short wavelength, room temperature, intersubband, giant nonlinear susceptibility, quasi-phase matching.</s0></fC01><fC02 i1="01" i2="3"><s0>001B00A30C</s0></fC02><fC02 i1="02" i2="3"><s0>001B40B55P</s0></fC02><fC02 i1="03" i2="3"><s0>001B40B65K</s0></fC02><fC02 i1="04" i2="3"><s0>001B40B65A</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Conversion fréquence optique</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Optical frequency conversion</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Génération harmonique 2</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Second harmonic generation</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Quasi accord phase</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Quasi-phase matching</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Déformation mécanique</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Strains</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Courant seuil</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Threshold current</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Laser cascade quantique</s0><s5>11</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Quantum cascade laser</s0><s5>11</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Laser semiconducteur</s0><s5>12</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Semiconductor lasers</s0><s5>12</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Optique non linéaire</s0><s5>19</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Nonlinear optics</s0><s5>19</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Densité courant</s0><s5>41</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Current density</s0><s5>41</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Température ambiante</s0><s5>42</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Ambient temperature</s0><s5>42</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Susceptibilité optique non linéaire</s0><s5>43</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Nonlinear optical susceptibility</s0><s5>43</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Hétérostructure</s0><s5>47</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Heterostructures</s0><s5>47</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Composé ternaire</s0><s5>50</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Ternary compounds</s0><s5>50</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Gallium Arséniure</s0><s2>NC</s2><s2>NA</s2><s5>51</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Gallium Arsenides</s0><s2>NC</s2><s2>NA</s2><s5>51</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Indium Arséniure</s0><s2>NC</s2><s2>NA</s2><s5>52</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Indium Arsenides</s0><s2>NC</s2><s2>NA</s2><s5>52</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Composé binaire</s0><s5>53</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Binary compounds</s0><s5>53</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>54</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>54</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Indium Phosphure</s0><s2>NC</s2><s2>NA</s2><s5>55</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Indium Phosphides</s0><s2>NC</s2><s2>NA</s2><s5>55</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Harmonique 2</s0><s5>61</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Second harmonic</s0><s5>61</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Armónica 2</s0><s5>61</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>As Ga In</s0><s4>INC</s4><s5>75</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>InP</s0><s4>INC</s4><s5>76</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>In P</s0><s4>INC</s4><s5>77</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>InGaAs</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>AlInAs</s0><s4>INC</s4><s5>84</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>InGaAs/InP</s0><s4>INC</s4><s5>85</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>0130C</s0><s4>INC</s4><s5>86</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>4255P</s0><s4>INC</s4><s5>91</s5></fC03><fC03 i1="28" i2="3" l="FRE"><s0>4265K</s0><s4>INC</s4><s5>92</s5></fC03><fC03 i1="29" i2="3" l="FRE"><s0>4265A</s0><s4>INC</s4><s5>93</s5></fC03><fN21><s1>178</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>Novel in-plane semiconductor lasers</s1><s2>10</s2><s3>San Francisco CA USA</s3><s4>2011</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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